D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
We report photoemission measurements of valence band critical points, core level binding energies and spin-orbit splittings, and Auger processes using synchrotron radiation in the 20-70 eV range for InSb. Based on our studies of InSb and other semiconductors, several precautions when interpreting photoemission data in this energy range (e.g. Auger processes, matrix elements) are discussed. © 1973.
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Robert W. Keyes
Physical Review B