Valence band and core level studies of InSb via photoemission measurements in the 20-70 eV range

Abstract

We report photoemission measurements of valence band critical points, core level binding energies and spin-orbit splittings, and Auger processes using synchrotron radiation in the 20-70 eV range for InSb. Based on our studies of InSb and other semiconductors, several precautions when interpreting photoemission data in this energy range (e.g. Auger processes, matrix elements) are discussed. © 1973.