PaperElectron-spin-resonance study of defects in plasma-enhanced chemical vapor deposited silicon nitrideD. Jousse, Jerzy Kanicki, et al.Applied Physics Letters
PaperBias stress-induced instabilities in amorphous silicon nitride/hydrogenated amorphous silicon structures: Is the "carrier-induced defect creation" model correct?A. Gelatos, Jerzy KanickiApplied Physics Letters
PaperElectrically neutral nitrogen dangling-bond defects in amorphous hydrogenated silicon nitride thin filmsW.L. Warren, P. Lenahan, et al.Journal of Applied Physics
Conference paperSCHOTTKY BARRIER FORMATION AT METAL-HYDROGENATED AMORPHOUS SILICON INTERFACES.Jerzy Kanicki, M. Osama Aboelfotoh, et al.ICPS Physics of Semiconductors 1984
