V-band and W-band SiGe bipolar low-noise amplifiers and voltage-controlled oscillators

Abstract

LNAs and VCOs operating between 50 and 86 GHz have been implemented using a 0.12-μm, 200-GHz SiGe bipolar technology. Unbalanced LNAs at 50, 60, and 77 GHz show ∼15 dB of gain, drawing 2, 6, and 8 mA from 1.8 V, respectively. The iCP1db for the LNAs are from -17 to -20 dBm. Noise figure of the 60-GHz LNA is 4.5 dB. Balanced amplifiers composed of two parallel LNAs with branch-line couplers at the input and output have also been demonstrated at 60 and 77 GHz, showing 14 and 12-dB gain, respectively. Differential Colpitts VCOs have been implemented at 53, 67, and 85 GHz. Phase noises at a 1-MHz offset are -100, -98, and -94 dBc/Hz, respectively, while tuning ranges are 3.7%, 3.1%, and 2.7%. Each VCO consumes roughty 25 mW, and provides -8 dBm output power to 100 Ω differential.