D. Niebieskikwiat, A. Silhanek, et al.
Physical Review B - CMMP
Paper
Unusually low resistivity of copper germanide thin films formed at low temperatures
Abstract
We report a first observation of the remarkably low electrical resistivity of copper germanide thin films formed at temperatures below 200°C. At these low temperatures, the ε-Cu3Ge phase with a monoclinic crystal structure is formed, with room-temperature resistivity which can be as low as 5.5 μΩ cm. The films are electrically stable up to at least 600°C, and, unlike pure copper, are also stable against oxygen and air exposure.
Related
L. Civale, A.D. Marwick, et al.
Physical Review Letters
L. Krusin-Elbaum, K.Y. Ahn, et al.
JVSTA
J.G. Ossandon, J.R. Thompson, et al.
Supercond Sci Technol