Brian A. Bryce, B. Robert Ilic, et al.
Applied Physics Letters
We report metal-oxide-semiconductor (MOS) capacitors and field-effect transistors (MOSFET's) in the GaAs semiconductor system using an unpinned interface. The structures utilize plasma-enhanced chemical vapor deposition (PECVD) for the silicon dioxide insulator on GaAs that has been terminated with a few monolayers of silicon during growth by molecular beam epitaxy. Interface densities in the structures have been reduced to ~ 1012 cm 2-eV High-frequency characteristics indicate strong inversion of both p-type and n-type GaAs. The excellent insulating quality of the oxide has also allowed demonstration of quasi-static characteristics. MOSFET's operating in depletion mode with a transconductance of 60 mS/mm at 8.0-pm gate lengths have been fabricated. © 1988 IEEE.
Brian A. Bryce, B. Robert Ilic, et al.
Applied Physics Letters
Sandip Tiwari
IEEE Electron Device Letters
Steven L. Wright, Kenneth Ho, et al.
CIC 2000
John U. Knickerbocker, Paul S. Andry, et al.
IBM J. Res. Dev