J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
The unoccupied surface electronic structure of Gd(0001) was investigated with high-resolution inverse-photoemission spectroscopy. An empty surface state near EF is observed at Γ̄. Two other surface-sensitive features are also revealed at 1.2 and 3.1 eV above the Fermi level. Hydrogen adsorption on Gd surfaces was used to distinguish the surface-sensitive features from the bulk features. The unoccupied bulk-band critical points are determined to be Γ3+ at 1.9 eV and A1 at 0.8 eV. © 1994 The American Physical Society.
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
Imran Nasim, Melanie Weber
SCML 2024