Universal conductance fluctuations in narrow Si accumulation layers

We have observed the effect of magnetic field orientation on reproducible aperiodic structure in the low-field magnetoconductance (H<1.5 T) of weakly localized, pinched, Si accumulation layers. We demonstrate for the first time that the structure depends on the perpendicular component of applied magnetic field. This implies that the structure arises from interference between electronic wave functions which represent conduction paths enclosing different amounts of flux. The observed magnitude of the structure is in good agreement with theory. © 1986 The American Physical Society.