I. Geppert, M. Eizenberg, et al.
ECS Transactions
We report the fabrication and characterization of GaN-based double heterostructure light emitting diodes grown by molecular beam epitaxy on Si(111) substrates. Light emitting diode operation is achieved by using the conducting Si(111) substrate as a backside n contact and a standard transparent Ni/Au p contact. We observe electroluminescence peaked in the ultraviolet ∼360nm, with a full width at half maximum of ∼17nm and in the violet at ∼420 nm. Electron microscopy studies indicate a high density of threading and planar defects. Consequences of these are discussed. © 1998 American Institute of Physics.
I. Geppert, M. Eizenberg, et al.
ECS Transactions
Talia S. Gershon, Yun Seog Lee, et al.
Applied Physics Letters
Oki Gunawan, Babak Fallahazad, et al.
PVSC 2010
Talia S. Gershon, Byungha Shin, et al.
Advanced Energy Materials