Ultrahigh-bandwidth WDM signal integrity in silicon-on-insulator nanowire waveguides

Abstract

We measure signal degradation from inter-channel crosstalk of ultrahigh-bandwidth signals in silicon-on-insulator waveguides, and single-channel power penalty over a range of injection powers. The results validate the suitability of silicon-based nanowire interconnects for broadband WDM networks. ©2007 IEEE.