About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
IEDM 2006
Conference paper
Ultra-thin phase-change bridge memory device using GeSb
Abstract
An ultra-thin phase-change bridge (PCB) memory cell, implemented with doped GeSb, is shown with < 100μA RESET current. The device concept provides for simplified scaling to small crosssectional area (60nm2) through ultra-thin (3nm) films; the doped GeSb phase-change material offers the potential for both fast crystallization and good data retention.