Ultra-thin phase-change bridge memory device using GeSb

Abstract

An ultra-thin phase-change bridge (PCB) memory cell, implemented with doped GeSb, is shown with < 100μA RESET current. The device concept provides for simplified scaling to small crosssectional area (60nm2) through ultra-thin (3nm) films; the doped GeSb phase-change material offers the potential for both fast crystallization and good data retention.