S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
A design for an ultra-small MOSFET is presented. MOSFETs with submicron channel lengths (L ≲ 0.25 μm) that operate with controlled punchthrough current are analyzed by two-dimensional numerical modeling. Current-voltage characteristics for subthreshold, nonsaturated and saturated regions of operation were obtained at various temperatures for devices of different channel length. The results indicate that device current is due to barrier-limited, space-charge-limited and surface-inversion conduction processes. © 1985.
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
O.F. Schirmer, K.W. Blazey, et al.
Physical Review B
Shaoning Yao, Wei-Tsu Tseng, et al.
ADMETA 2011
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering