Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
We have studied the luminescence intensity associated with type-I and type-II interband transitions in several CdSe/ZnTe quantum well structures as a function of CdSe layer thickness. It was found that as the CdSe layers become wider, the intensity of the type-I transition increases, while that of the type-II transition decreases. These results are analyzed in terms of a variational calculation which takes into account the Coulomb interaction between the electrons and holes that participate in the interband transitions. © 1998 Elsevier Science Ltd. All rights reserved.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
O.F. Schirmer, K.W. Blazey, et al.
Physical Review B
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
Shaoning Yao, Wei-Tsu Tseng, et al.
ADMETA 2011