Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
Tunneling-current measurements in Ga1-xAlxAs-GaAs-Ga1-xAlxAs heterostructures under hydrostatic pressure show that nonresonant tunneling occurs preferentially through the lowest potential barrier, while resonant tunneling is determined solely by a point profile. For fixed voltages, the low-temperature current through a 100 -40 -100 structure with Ga0.60Al0.40As barriers increased with pressure, up to 11 kbar. The rate of increase showed an abrupt rise at 4 kbar, which is attributed to tunneling through a -X barrier. This interpretation is consistent with a rapid increase of the tunneling current in AlAs-GaAs-AlAs, even at low pressures. On the other hand, a negative-resistance feature associated with resonant tunneling via quantum-well states, shifted smoothly to lower voltages with pressure, indicating that the energy of the confined states is established by a pressure-dependent -point profile. © 1986 The American Physical Society.
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
Ronald Troutman
Synthetic Metals
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron