Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
We present a review of the principles of scanning tunneling microscopy and of its extensions by modulation techniques. Emphasis is placed on topographic studies of semiconductor surfaces with atomic resolution, finite voltage effects and surface state detection by tunneling spectroscopy. Results obtained for an ordered Au/Si(111) overlayer illustrate the versatility of this unique local probe of structural and electronic surface properties. © 1986.
T.N. Morgan
Semiconductor Science and Technology
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000