Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
The tunneling rate is calculated in a AlGaAs (100)-oriented barrier in GaAs, for a Fowler-Nordheim process in which electrons are scattered between the Γ minimum and the four lateral X minima by the alloy disorder. The effective exponent is found to be that given by the transverse X-valley mass, and the prefactor is estimated to be small but not negligible. © 1987.
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
Eloisa Bentivegna
Big Data 2022
Ronald Troutman
Synthetic Metals