William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
We report on transport and EPR studies of (TMTSF)2-PF6, both in its pristine form and when doped with the sulfur analog TMTTF. All samples undergo a single phase transition which can be seen in both the transport and magnetic data and which, in the undoped material, occurs at ∼11.5 K. The effects of a 3% dopant concentration are dramatic: a 40% rise in the transition temperature, a 130% rise in the room- temperature spin susceptibility and a 30% fall in the low-temperature g shift. Possible causes are discussed. © 1981.
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids