Sung Ho Kim, Oun-Ho Park, et al.
Small
We describe theoretically a new, transient, photovoltaic effect which occurs in superlattices presenting a spatial separation of the electron and hole wavefunctions together with a lack of global reflection symmetry. The luminescence of an InAs-GaSb semiconductor superlattice under pulsed excitation shows an increase of the band gap with the density of injected carriers, which we relate to this photovoltaic effect. © 1986.
Sung Ho Kim, Oun-Ho Park, et al.
Small
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
J.K. Gimzewski, T.A. Jung, et al.
Surface Science