About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
ICCAD 2013
Conference paper
Transient modeling of TSV-wire electromigration and lifetime analysis of power distribution network for 3D ICs
Abstract
In this paper, we present a transient modeling of electromigration (EM) in TSV and TSV-to-wire interfaces in the power delivery network (PDN) of 3D ICs. In particular, we model atomic depletion and accumulation, effective resistance degradation, and full chip-scale PDN lifetime degradation due to EM. Our major focuses are on: (1) time-dependent multi-physics EM modeling approach to model TSVs and connecting wires under the influence of coupled physical phenomenon including electric field, temperature, and stress; (2) time-dependent EM-aware power integrity analysis methodology, which is integrated with the TSV modeling approach to predict long-term IR-drop degradation in full-chip 3D power delivery networks. Our studies show that voids and hillocks grow at various TSV-to-wire interfaces and degrade the effective resistance of TSVs significantly. In addition, our full-chip PDN lifetime analysis shows significant increase in maximum IR drop during lifetime due to EM effects. © 2013 IEEE.