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PaperThreshold instability in IGFET's due to emission of leakage electrons from silicon substrate into silicon dioxideT.H. Ning, C.M. Osburn, et al.Applied Physics Letters
Conference paperA comparative study of NBTI as a function of Si substrate orientation and gate dielectrics (SiON and SiON/HfO 2)S. Zafar, M. Yang, et al.VLSI Technology 2005