Da Zhang, Paul Solomon, et al.
Sensors and Actuators, B: Chemical
In this letter, strong low frequency noise (LFN) reduction is observed when the buried oxide (BOX)/silicon interface of a Schottky junction gated silicon nanowire field-effect transistor (SJGFET) is depleted by a substrate bias. Such LFN reduction is mainly attributed to the dramatic reduction in Coulomb scattering when carriers are pushed away from the interface. The BOX/silicon interface depletion can also be achieved by sidewall Schottky junction gates in a narrow channel SJGFET, leading to an optimal LFN performance without the need of any substrate bias.
Da Zhang, Paul Solomon, et al.
Sensors and Actuators, B: Chemical
Steven J. Koester, Isaac Lauer, et al.
ECS Transactions
Qitao Hu, Si Chen, et al.
Science Advances
I.-B. Magdû, Xiao Hu Liu, et al.
Applied Physics Letters