Hiroshi Ito, Reinhold Schwalm
JES
We report time-resolved measurements of photoluminescence in bulk a-SiO2 using 7.9- and 6.4-eV excitation. Time-resolved spectra have been obtained at room temperature and 25 K, and the intensity and decay rates of various luminescence bands have been measured as a function of temperature. Bands at 1.9, 2.2, 2.7, and 4.3 eV are identified. In addition, there is a very broad luminescence peaking between 34 eV but extending to below the 1.5-eV cutoff of our measurements. We have also measured photoluminescence in crystalline quartz and in a thermally grown oxide. Both the 4.3- and 1.9-eV bands are seen in the thermal oxide, but the 2.7-eV band is absent. In the crystal, the 1.9-eV band is absent. © 1987 The American Physical Society.
Hiroshi Ito, Reinhold Schwalm
JES
A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
T.N. Morgan
Semiconductor Science and Technology