Impact of the nanotube diameter on the performance of CNFETs
Zhihong Chen, Joerg Appenzeller, et al.
DRC 2005
The inhomogeneity of Schottky-barrier (SB) height ΦB is found to strongly affect the threshold voltage Vth of SB-MOSFETs fabricated in ultrathin body silicon-on-insulator (SOI). The magnitude of this influence is dependent on gate oxide thickness tox and SOI body thickness tsi; the contribution of inhomogeneity to the Vth variation becomes less pronounced with smaller tox and/or larger tsi. Moreover, an enhanced Vth variation is observed for devices with dopant segregation used for reduction of the effective ΦB. Furthermore, a multigate structure is found to help suppress the Vth variation by improving carrier injection through reduction of its sensitivity to the ΦB inhomogeneity. A new method for extraction of ΦB from room temperature transfer characteristics is also presented. © 2008 IEEE.
Zhihong Chen, Joerg Appenzeller, et al.
DRC 2005
Joachim Knoch, Min Zhang, et al.
IEEE Transactions on Electron Devices
Klaus Michael Indlekofer, Radoslav Németh, et al.
DRC 2007
Joachim Knoch, Min Zhang, et al.
IEEE Transactions on Electron Devices