REACTIVE ION ETCHING OF Al(Cu) ALLOYS.
C.-K. Hu, M.B. Small, et al.
MRS Fall Meeting 1986
We have observed a sharp threshold for the process of optically induced glide at which the velocity changes by more than a factor of 103 when the excitation intensity changes only 20%. This threshold is insensitive to doping and to the presence of a p-n junction. The effect is shown not to be related to recombination-enhanced motion or to local heating. An explanation in terms of the reduction of frictional forces by interaction with unrecombined carriers is offered. © 1978 The American Physical Society.
C.-K. Hu, M.B. Small, et al.
MRS Fall Meeting 1986
M.B. Small, R. Ghez
Journal of Crystal Growth
T.F. Kuech, R.M. Potemski, et al.
Journal of Electronic Materials
K.W. Choi, N.J. Mazzeo, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films