THIN FILM TECHNOLOGY FOR ADVANCED SEMICONDUCTORS. PART 3: VLSI INTERCONNECT METALIZATION.

Abstract

Three basic aspects of VLSI metalization are discussed: the problems of wiring complexity that arise from the need for interconnecting more devices when device density is increased. The impact of device scaling as related to device performance, which imposed certain requirements in device structure and functions that have to be fulfilled by proper design of the interconnect structure. Contact resistance and electromigration, which put additional limitations on the design and processing of VLSI metalization.