Bahman Hekmatshoar
IEEE T-ED
Heterojunction field-effect transistor devices with thin-film crystalline silicon channels and gate, source, and drain contacts formed by plasma-enhanced chemical vapor deposition (PECVD) at temperatures have been demonstrated. The gate and source/drain contacts are comprised of hydrogenated amorphous silicon and crystalline silicon, respectively; both grown in the same PECVD reactor. An ON/OFF ratio of ${>}{10}6, pinch-off voltage of approximately. © 2013 IEEE.
Bahman Hekmatshoar
IEEE T-ED
J.C. Sturm, Y. Huang, et al.
ULIS 2011
Bahman Hekmatshoar, Davood Shahrjerdi, et al.
PVSC 2014
Bahman Hekmatshoar
Electronics Letters