Bahman Hekmatshoar, T.H. Ning
Electronics Letters
Heterojunction field-effect transistor devices with thin-film crystalline silicon channels and gate, source, and drain contacts formed by plasma-enhanced chemical vapor deposition (PECVD) at temperatures have been demonstrated. The gate and source/drain contacts are comprised of hydrogenated amorphous silicon and crystalline silicon, respectively; both grown in the same PECVD reactor. An ON/OFF ratio of ${>}{10}6, pinch-off voltage of approximately. © 2013 IEEE.
Bahman Hekmatshoar, T.H. Ning
Electronics Letters
Bahman Hekmatshoar, Davood Shahrjerdi, et al.
IEDM 2011
J.C. Sturm, Y. Huang, et al.
ULIS 2011
Davood Shahrjerdi, Bahman Hekmatshoar, et al.
IEEE Journal of Photovoltaics