Sung Ho Kim, Oun-Ho Park, et al.
Small
We have measured the thermoelectric power of pure NbSe3 as well as samples which have been substitutionally doped with isoelectronic Ta and the charged impurity Ti and separate samples which have been radiation damaged by 2.5 MeV protons. We find that 5% Ta doping supresses the lower temperature charge density wave transition. In contrast, the radiation damaged samples and 0.1% Ti samples with larger residual resistivities then the Ta doped samples retain the CDW transitions. A discussion is given of the difference between doping and radiation damage. © 1981.
Sung Ho Kim, Oun-Ho Park, et al.
Small
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
P.C. Pattnaik, D.M. Newns
Physical Review B
Hiroshi Ito, Reinhold Schwalm
JES