Jaeho Lee, Sangbum Kim, et al.
IEEE Electron Device Letters
We demonstrate techniques for measuring thermoelectric voltages and generating on-chip power using a silicon-on-insulator substrate. Our design uses lateral heat conduction in the silicon overlayer to establish temperature gradients, which dramatically reduces microfabrication complexity compared to competing designs based on a free-standing membrane. This letter characterizes the thermoelectric power of a metal-semiconductor structure involving a doped SbTe alloy that is relevant for phase-change memory. The thermoelectric power of the SbTe-TiW thermocouple is 24 μV/K, and the power generation output achieves up to 0.56 μW/cm 2 with a temperature gradient of 18°. © 2011 IEEE.
Jaeho Lee, Sangbum Kim, et al.
IEEE Electron Device Letters
Ryan V. Zarcone, Jesse H. Engel, et al.
Scientific Reports
Sangbum Kim, Geoffrey W. Burr, et al.
MRS Bulletin
M. Ito, Masatoshi Ishii, et al.
NANO 2018