Abstract
The partial pressures of the gas species GeCl4, GeCl2, GeHCl3, HC1, and H2 in equilibrium with Ge solid have been calculated in the temperature range 400°-1223°K at chlorine to hydrogen ratios ranging from 10-4 to 10. The theoretical efficiency for the deposition of germanium as applied to an open tube epitaxial system is discussed. Comparisons are made to the Si-H-Cl system. © 1972, The Electrochemical Society, Inc. All rights reserved.