Applied Surface Science

Paper

01 Jan 1990

The Si(001)/SiO₂ interface

View publication

Abstract

The atomic structure of Si(001)/SiO2 interfaces, produced by the oxidation of initially smooth Si surfaces, is discussed. Soft X-ray spectroscopy shows the detailed interfacial atomic configuration to depend sensitively on the preparation conditions. © 1989.

Related

Paper

Fabrication of Si/SiGe quantum point contacts by electron-beam lithography and shallow wet-chemical etching

U. Wieser, U. Kunze, et al.

Physica E: Low-Dimensional Systems and Nanostructures

Paper

On boundary conditions in lattice Boltzmann methods

Shiyi Chen, Daniel Martínez, et al.

Physics of Fluids

Paper

Silylation of resist materials using di- and polyfunctional organosilicon compounds

E. Babich, J. Paraszczak, et al.

Microelectronic Engineering

Paper

Surface crystallography of the c(2×2) sodium overlayer on Al(100)

B.A. Hutchins, T.N. Rhodin, et al.

Surface Science

View all publications