A. Reisman, M. Berkenblit, et al.
Journal of Electronic Materials
Misfit accommodation in epitaxially grown GaAs1-xPx was examined by x-ray topography which shows crosshatch contrast and by transmission electron microscopy which reveals individual misfit dislocations. Of these misfit dislocations 80% are glissile 60°dislocations and the remainder are perfect edge dislocations. Contrast considerations show that the x-ray images are fully compatible with the actual dislocation structure although they cannot resolve the individual dislocations. © 1974 American Institute of Physics.
A. Reisman, M. Berkenblit, et al.
Journal of Electronic Materials
Masanori Murakami, H.-C.W. Huang, et al.
Journal of Applied Physics
J.W. Matthews, A.E. Blakeslee, et al.
Thin Solid Films
E. Rimini, W.K. Chu, et al.
Journal of Applied Physics