PaperEffect of electron trapping on IGFET characteristicsT.H. Ning, C.M. Osburn, et al.Journal of Electronic Materials
PaperThe junction depth of concentration-dependent diffusion. Zinc in III-V compoundsL.L. ChangSolid-State Electronics
Conference paperMagnetic manifestations of carrier localization in quantum wellD.D. Awschalom, J. Warnock, et al.QELS 1989