Gerald Burns, C.R. Wie, et al.
Applied Physics Letters
We have fabricated lattice matched InGaAs/AlInAs metal-semiconductor-metal photodetectors on InP. The detectors have very low dark currents, low capacitance, and good responsivity, corresponding to at least 95% internal collection efficiency. We demonstrate multigigahertz bandwidths, as measured in the frequency domain, are achievable at typical logic-level bias voltages, and that therefore these detectors are a viable candidate for long wavelength data communication applications. © 1992 IEEE
Gerald Burns, C.R. Wie, et al.
Applied Physics Letters
R.A. Haring, M.S. Milshtein, et al.
VLSI Circuits 1996
J. Falta, R.M. Tromp, et al.
Physical Review Letters
S. Chang, I.M. Vitomirov, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films