A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
The effect of Li deposition on the sputtering of Si+ from oxygenated Si surfaces has been studied. It is observed that at low oxygen coverages, the Si+ yield decreases exponentially with the Li induced decrease of the work function ϕ. With the formation of thermally grown silicon oxide on the surface, the Si+ yield deviates from the simple exponential dependence on ϕ. The Si+ yield becomes independent of ϕ for an appreciable range of ϕ in cases of heavier oxidation. © 1983 IOP Publishing Ltd.
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Robert W. Keyes
Physical Review B