Conference paper
True 3-D displays for avionics and mission crewstations
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
The crystalline perfection of Sn-doped GaAs crystals grown by the horizontal Bridgman technique was found to be dependent on the crystal growth direction. The highest perfection occurred for crystals grown near the <013> direction. Portions of both seeded and unseeded doped crystals grown in this direction were found to be dislocation-free. Also, undoped crystals seeded in the <013> direction were dislocation-free. © 1971, by The Electrochemical Society, Inc. All rights reserved.
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
P.C. Pattnaik, D.M. Newns
Physical Review B
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics