William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Electron-energy-loss measurements on cleaved Si(111) 2×1 surfaces show a temperature dependence in the position and shape of the absorption edge of the 0.5-eV surface-state transition. The observed trends in the onset line shape provide experimental evidence for surface-state excitonic polarons. In addition, a lower-lying, defect-related surface-state transition at 0.35 eV is studied at low temperature and found to have localized character. © 1985 The American Physical Society.
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Robert W. Keyes
Physical Review B