The DX centre
T.N. Morgan
Semiconductor Science and Technology
The temperature dependence of the surface-state electronic transition for cleaved Ge(111)-2×1 is reported and compared to previous results on Si(111)-2×1. Ge(111)-2×1 shows an almost linear dependence of the surface-state band gap between 30 and 295 K, varying between 535 and 415 meV, respectively. Cleaved Ge(111)-2×1 shows little evidence for the defect-induced states usually found, even on excellent single-domain 2×1 cleaves of Si(111). © 1986 The American Physical Society.
T.N. Morgan
Semiconductor Science and Technology
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science