J.O. Olowolafe, P.S. Ho, et al.
Journal of Applied Physics
Relatively good GaAs solar cells can be made from poor-quality substrates by making the junction deep (≳1 μ) instead of shallow and by "leaching" both the pGaAs and nGaAs regions during the growth process. AM0 efficiencies of 14.7% (19% AM1) have been obtained from substrates with starting substrate diffusion lengths of 0.6 μ.
J.O. Olowolafe, P.S. Ho, et al.
Journal of Applied Physics
W.P. Dumke, J. Woodall, et al.
Solid-State Electronics
D.K. Sadana, H.J. Hovel, et al.
IEEE International SOI Conference 1993
D.G. Carlson, E. Mosekilde, et al.
Journal of Applied Physics