Switching probability in all-perpendicular spin valves

Abstract

Spin-transfer devices that have perpendicularly magnetized free and polarizing layers offer the potential for reduced critical currents while still maintaining a high energy barrier U towards thermally induced magnetization reversal. A macrospin [1,2] model predicts a zero-temperature switching current Ic0 ⋉ U for perpendicularly magnetized devices. In contrast, for in-plane devices the current is increased by a term stemming from the free layer demagnetizing field caused by the free layer magnetization moving out of the plane during the switching process: Ic0 ⋉ U + μ0Mc02 V/4. © 2010 IEEE.