H. Baratte, A.J. Fleischman, et al.
JES
Paper
Switching and memory in ZnSe single bond sign Ge heterojunctions
Abstract
Heterojunctions of nZnSeSingle Bond signpGe switched from a high impedance to low in 100 nsec when a threshold voltage is exceeded. Resetting occurs in the opposite bias direction in 10 nsec after sufficient current is applied. Either state is maintained with all bias removed for a minimum of two weeks. © 1970 The American Institute of Physics.
Related
A.C. Callegari, D.A. Buchanan, et al.
Applied Physics Letters
Conference paper
GaAs MESFET 16 × 16 crosspoint switch at 1700 Mbits/sec
C.J. Anderson, J.H. Magerlein, et al.
GaAs IC 1987
J. Cai, K. Rim, et al.
IEDM 2004