R.M. Tromp, W. Theis, et al.
Physical Review Letters
Displacive adsorption of As on vicinal Si(001) surfaces has in the past been attributed to reduction of step-related (extrinsic) surface stress. Here we show images of As adsorption on flat Si(001), obtained with in situ low-energy electron microscopy, and with scanning tunneling microscopy. We find displacive adsorption even on micrometer-sized terraces, on which steps play no significant role. These new results reveal the role of intrinsic surface stress as a driving force for interfacial mixing. © 1992 The American Physical Society.
R.M. Tromp, W. Theis, et al.
Physical Review Letters
J.T. Sadowski, G. Sazaki, et al.
Physical Review Letters
F.M. Ross, J. Tersoff, et al.
Microscopy Research and Technique
A.W. Denier van der Gon, R.M. Tromp, et al.
Thin Solid Films