Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon

Abstract

The deposition of amorphous LaAlO 3 thin films by molecular beam deposition (MBD) directly on silicon without detectable oxidation of the underlying substrate was investigated. The suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon was also studied. The films for transmission infrared absorption spectroscopy were grown on one side of double-side polished p-type (001) Si. It was shown that the native SiO 2 on the silicon wafer was thermally desorbed in ultrahigh vacuum at a substrate temperature of 900°C. The Si 2s peak measured by XPS from a 10-Å-thick film of amorphous LaAlO 3/Si.