Shaoning Yao, Wei-Tsu Tseng, et al.
ADMETA 2011
The ion-beam channeling technique has been used to characterize the interface and the first few layers of [100] GaSb/AlSb superlattice structures. Strain caused by alternating tensile and compressive stress has been detected by measuring the oscillation of the [110]-aligned direction with depth. From the angular displacement and its oscillation, the amount of strain in the superlattice has been determined directly. © 1983 The American Physical Society.
Shaoning Yao, Wei-Tsu Tseng, et al.
ADMETA 2011
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
R.W. Gammon, E. Courtens, et al.
Physical Review B
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990