Effect of surface nitridation on the Ge/HfO2 interface
R. Garg, D. Misra, et al.
ECS Meeting 2005
Photocatalysis has widespread applications from solar cells to photolithography. We studied the photocatalytic properties of TiO2 films of thicknesses down to 2 nm, grown on n -type and p -type silicon wafers, using the oxidation of isopropanol as a model system. Direct in vacuo mass spectrometry measurements were performed under irradiation above the TiO 2 bandgap. We present a model consistent with our experimental results, which indicate that only near-surface electron-hole pair generation is relevant and that the reaction rate can be controlled by varying the substrate Fermi level in going from n -type to p -type silicon, by approximately a factor of 2. © 2009 American Institute of Physics.
R. Garg, D. Misra, et al.
ECS Meeting 2005
L.Å. Ragnarsson, N.A. Bojarczuk, et al.
IEEE Electron Device Letters
E. Tutuc, S. Guha, et al.
Applied Physics Letters
S. Guha, R. Haight, et al.
Journal of Applied Physics