Conal E. Murray, T. Graves-Abe, et al.
Applied Physics Letters
Real-space maps of strain within silicon-on-insulator (SOI) features induced by adjacent, embedded shallow-trench-isolation (STI) Si O2 regions were obtained using x-ray microbeam diffraction. The quantitative strain mapping indicated that the SOI strain was largest at the SOI/STI interface and decreased as a function of distance from this interface. An out-of-plane residual strain of approximately -31με was observed in the blanket regions of the SOI. A comparison of the depth-averaged strain distributions to the strain profiles calculated from an Eshelby inclusion model indicated an equivalent eigenstrain of -0.55% in the STI regions acting on the SOI features. © 2007 American Institute of Physics.
Conal E. Murray, T. Graves-Abe, et al.
Applied Physics Letters
Shyng-Tsong Chen, Hideyuki Tomizawa, et al.
IITC/MAM 2011
Conal E. Murray, K.L. Saenger, et al.
Journal of Applied Physics
Henry H. K. Tang, Conal E. Murray, et al.
IEEE TNS