T. Spooner, J.C. Arnold, et al.
ECS Meeting 2009
Real-space maps of strain within silicon-on-insulator (SOI) features induced by adjacent, embedded shallow-trench-isolation (STI) Si O2 regions were obtained using x-ray microbeam diffraction. The quantitative strain mapping indicated that the SOI strain was largest at the SOI/STI interface and decreased as a function of distance from this interface. An out-of-plane residual strain of approximately -31με was observed in the blanket regions of the SOI. A comparison of the depth-averaged strain distributions to the strain profiles calculated from an Eshelby inclusion model indicated an equivalent eigenstrain of -0.55% in the STI regions acting on the SOI features. © 2007 American Institute of Physics.
T. Spooner, J.C. Arnold, et al.
ECS Meeting 2009
S. Gates, D. Neumayer, et al.
Journal of Applied Physics
J. Zhang, S. Pancharatnam, et al.
IEDM 2019
Conal E. Murray, Deepika Priyadarshini, et al.
Applied Physics Letters