B.F. Yang, J.P. De. Souzab, et al.
ECS Meeting 2008
Strain distributions within a silicon-on-insulator (SOI) layer induced by overlying compressively stressed Si3 N4 features were measured using x-ray microbeam diffraction. A comparison of analytical and numerical mechanical models of the depth-averaged strain distributions to the measured strain profiles in the SOI layer indicated a blanket film stress of -2.5 GPa in the Si3 N4 features. A two-dimensional boundary element model, implemented to analyze thin film/substrate systems, reproduced the observed strain distributions better than an edge-force formulation due to the incorporation of loading along the Si3 N4 /Si interface. © 2008 American Institute of Physics.
B.F. Yang, J.P. De. Souzab, et al.
ECS Meeting 2008
Conal E. Murray, Paul R. Besser, et al.
MRS Spring Meeting 2009
Conal E. Murray
Journal of Applied Physics
K.F. Etzold, R.A. Roy, et al.
IUS 1990