G.M.W. Kroesen, G.S. Oehrlein, et al.
Applied Physics Letters
The etching of silicon in CF3Br/O2 plasmas has been examined. In situ x-ray photoelectron spectroscopy shows that silicon surfaces etched in CF3Br/O2 plasmas with a proportion of 30% O 2 or less are covered with a reaction layer that is mainly due to bromine bonded to silicon. As the proportion of oxygen is increased above 30% the reaction layer becomes thicker and contains mainly fluorine and oxygen, and the silicon etch rate decreases simultaneously.
G.M.W. Kroesen, G.S. Oehrlein, et al.
Applied Physics Letters
A.D. Marwick, G.S. Oehrlein, et al.
Applied Physics Letters
W.M. Chen, O.O. Awadelkarim, et al.
Physical Review Letters
G.S. Oehrlein, S. Cohen, et al.
Applied Physics Letters