L.L. Chang, N. Kawai, et al.
Applied Physics Letters
We have used the cross-sectional transmission electron microscope to study InAs grown by molecular beam epitaxy. For the InAs films directly grown on GaAs, the dislocation density at the InAs-GaAs interface is several orders of magnitude higher than that in the bulk films. Those grown by the step grading technique show strong interactions among dislocations at the interfaces, and a much reduced dislocation density in the thin InAs layers.
L.L. Chang, N. Kawai, et al.
Applied Physics Letters
M. Ziesmann, D. Heitmann, et al.
Physical Review B
L. Esaki, L.L. Chang
Physical Review Letters
Chin-An Chang
Journal of Applied Physics