J.Z. Sun, M.C. Gaidis, et al.
Journal of Applied Physics
We review the use-case and requirements for Spin-Transfer-Torque MRAM (STT-MRAM) to replace SRAM in last-level-cache. We then describe recent work on double magnetic tunnel junctions and double spin-torque magnetic tunnel junctions to reduce the MRAM switching current. The latter devices open up the possibility of reducing the switching current by a factor of two while maintaining high magnetoresistance, which could enable the use of STT-MRAM in last-level-cache.
J.Z. Sun, M.C. Gaidis, et al.
Journal of Applied Physics
Jonathan Z. Sun, R.P. Robertazzi, et al.
Physical Review B - CMMP
D.C. Worledge, G. Hu, et al.
Applied Physics Letters
G. Hu, C. Safranski, et al.
IEDM 2022