Strain relief during growth: CaF2 on Si(111)

Abstract

The growth of thin CaF2 films on Si(111) was studied with in situ low energy electron microscopy and transmission electron microscopy. As the strained epitaxial film passes through the critical thickness, initial dislocations form in triplets ("trigons"). These serve as sources for full edge dislocations which subsequently form a dense network. This unusual dislocation structure provides a natural explanation for a recently proposed "two-dimensional structure modulation" of the Si(111)/CaF2 interface. © 1995 The American Physical Society.