A. Khakifirooz, Kangguo Cheng, et al.
VLSI-TSA 2010
Limitations of conventional strain engineering methods for fully-depleted SOI structure are reviewed and methods to extend these approaches to future FDSOI devices are discussed. The application of global strain engineering combined with biaxial to uniaxial strain conversion is shown to be promising. Finally, methods to utilize oxidation-induced strain engineering are introduced. ©The Electrochemical Society.
A. Khakifirooz, Kangguo Cheng, et al.
VLSI-TSA 2010
Kingsuk Maitra, Ali Khakifirooz, et al.
IEEE Electron Device Letters
Kangguo Cheng, Ali Khakifirooz
Science China Information Sciences
Q. Liu, Frederic Monsieur, et al.
VLSI Technology 2011